Electrochemical Vapour Deposition of Doped LaCrO3
نویسندگان
چکیده
منابع مشابه
Growth and Electrical Properties of Doped ZnO by Electrochemical Deposition
In this work, pure and different metal ions doped ZnO thin films were obtained by a facile electrochemical deposition process. Different morphologies of ZnO, such as nanoplates, nanoparticles, as well as dense film can be obtained by doping Cu, In, and Al, respectively. Besides, the electrical properties of ZnO were also dependent on the doping ions. In this work, only pure ZnO shows resistive ...
متن کاملAtmospheric pressure chemical vapour deposition of boron doped titanium dioxide for photocatalytic water reduction and oxidation.
Boron-doped titanium dioxide (B-TiO2) films were deposited by atmospheric pressure chemical vapour deposition of titanium(iv) chloride, ethyl acetate and tri-isopropyl borate on steel and fluorine-doped-tin oxide substrates at 500, 550 and 600 °C, respectively. The films were characterised using powder X-ray diffraction (PXRD), which showed anatase phase TiO2 at lower deposition temperatures (5...
متن کاملSurface depletion thickness of p-doped silicon nanowires grown using metal-catalysed chemical vapour deposition
An accurate evaluation of the radial dopant profile in a nanowire is crucial for designing future nanoscale devices synthesized using bottom-up techniques. We developed a very slow wet chemical etchant for gradually reducing the diameters of metal-catalysed, boron-doped silicon nanowires with varying diameters and lengths. Particular care has been taken to perform the experiment at room tempera...
متن کاملMg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition
The growth of high-performance Mg-doped p-type Al x Ga1–xN (x = 0.35) layers using low-pressure metalorganic chemical vapour deposition on an AlN/sapphire template is reported. The influence of growth conditions on the p-type conductivity of the Al x Ga1–xN (x = 0.35) alloy was investigated. It was found that the p-type resistivity of the AlGaN alloy demonstrates a marked dependence on the Mg c...
متن کاملTranslation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition
In this work, the impact of translation rates in fluorine doped tin oxide (FTO) thin films using atmospheric pressure chemical vapour deposition (APCVD) were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orient...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ECS Proceedings Volumes
سال: 1995
ISSN: 0161-6374,2576-1579
DOI: 10.1149/199501.0960pv